Search for: All records

Recent band structure calculations have suggested the potential for band tuning in the chiral semiconductor Ag3AuTe2 to zero upon application of negative strain. In this study, we report on the synthesis of polycrystalline Ag3AuTe2 and investigate its transport and optical properties and mechanical compressibility. Transport measurements reveal the semiconducting behavior of Ag3AuTe2 with high resistivity and an activation energy Ea of 0.2 eV. The optical bandgap determined by diffuse reflectance measurements is about three times wider than the experimental Ea. Despite the difference, both experimental gaps fall within the range of predicted bandgaps by our first-principles density functional theory (DFT) calculations employing the Perdew–Burke–Ernzerhof and modified Becke–Johnson methods. Furthermore, our DFT simulations predict a progressive narrowing of the bandgap under compressive strain, with a full closure expected at a strain of −4% relative to the lattice parameter. To evaluate the feasibility of gap tunability at such substantial strain, the high-pressure behavior of Ag3AuTe2 was investigated by in situ high-pressure x-ray diffraction up to 47 GPa. Mechanical compression beyond 4% resulted in a pressure-induced structural transformation, indicating the possibility of substantial gap modulation under extreme compression conditions. 

As the field of exfoliated van der Waals electronics grows to include complex heterostructures, the variety of available in-plane symmetries and geometries becomes increasingly valuable. In this work, we present an efficient chemical vapor transport synthesis of NbSe2I2 with the triclinic space group P1̅. This material contains Nb–Nb dimers and an in-plane crystallographic angle γ = 61.3°. We show that NbSe2I2 can be exfoliated down to few-layer and monolayer structures and use Raman spectroscopy to test the preservation of the crystal structure of exfoliated thin films. The crystal structure was verified by single-crystal and powder X-ray diffraction methods. Density functional theory calculations show triclinic NbSe2I2 to be a semiconductor with a band gap of around 1 eV, with similar band structure features for bulk and monolayer crystals. The physical properties of NbSe2I2 have been characterized by transport, thermal, optical, and magnetic measurements, demonstrating triclinic NbSe2I2 to be a diamagnetic semiconductor that does not exhibit any phase transformation below room temperature. 

Abstract Symmetry-protected topological crystalline insulators (TCIs) have primarily been characterized by their gapless boundary states. However, in time-reversal- ($${{{{{{{\mathcal{T}}}}}}}}$$ $T$-) invariant (helical) 3D TCIs—termed higher-order TCIs (HOTIs)—the boundary signatures can manifest as a sample-dependent network of 1D hinge states. We here introduce nested spin-resolved Wilson loops and layer constructions as tools to characterize the intrinsic bulk topological properties of spinful 3D insulators. We discover that helical HOTIs realize one of three spin-resolved phases with distinct responses that are quantitatively robust to large deformations of the bulk spin-orbital texture: 3D quantum spin Hall insulators (QSHIs), “spin-Weyl” semimetals, and$${{{{{{{\mathcal{T}}}}}}}}$$ $T$-doubled axion insulator (T-DAXI) states with nontrivial partial axion angles indicative of a 3D spin-magnetoelectric bulk response and half-quantized 2D TI surface states originating from a partial parity anomaly. Using ab-initio calculations, we demonstrate thatβ-MoTe₂realizes a spin-Weyl state and thatα-BiBr hosts both 3D QSHI and T-DAXI regimes.